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BYD77AA Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # BYD77AA
Description  ULTRA FAST LOW-LOSS CONTROLLED AVALANCHE RECTIFIERS
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

BYD77AA Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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BYD77AA - BYD77GA
ULTRA FAST LOW-LOSS
CONTROLLED AVALANCHE RECTIFIERS
PRV : 50 - 400 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated junction chip
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
BYD
BYD
BYD
BYD
BYD
BYD
BYD
77AA 77BA 77CA 77DA 77EA 77FA 77GA
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
250
300
400
V
Maximum Continuous Reverse Voltage
VR
50
100
150
200
250
300
400
V
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA
V(BR)R-min
55
110
165
220
275
330
440
V
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)
IFSM
A
Maximum Repetitive Peak Forward Current at Ttp = 105 °C
IFRM
A
Maximum Forward Voltage at IF = 1.0 A ; TJ = 25 °C
VF
V
Maximum Reverse Current at VR =VRRMmax
TJ = 25 °C
IR
μA
TJ = 165 °C
IR(H)
μA
Maximum Reverse Recovery Time (Note 4)
Trr
ns
Thermal Resistance from Junction to Tie-Point
Rth j-tp
K / W
Thermal Resistance from Junction to Ambient (Note 5)
Rth j-a
K / W
Junction Temperature Range
TJ
°C
Storage Temperature Range
TSTG
°C
Notes :
(1) Ttp = 105 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; VR = VRRMmax
(4) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≤ 40 μm.
Page 1 of 3
Rev. 00 : February 13, 2008
UNIT
15
13
SYMBOL
RATING
25
2.0
(1)
1.85
(1)
IF(AV)
A
0.85
(2)
0.80
(2)
- 65 to + 175
0.98
1.05
1.0
100
25
50
30
150
- 65 to + 175
2.0
± 0.2
2.1
± 0.2
SMA (DO-214AC)
1.2
± 0.2
2.6
± 0.15
Dimensions in millimeters
1.1
± 0.3
0.2
± 0.07
IATF 0060636
SGS TH07/1033
TW00/17276EM
TH97/10561QM


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