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BCW30LT1D Datasheet(PDF) 6 Page - ON Semiconductor

Part # BCW30LT1D
Description  General Purpose Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCW30LT1D Datasheet(HTML) 6 Page - ON Semiconductor

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BCW30LT1G
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6
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k 10k
20k
50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN-569)
ZqJA(t) = r(t) • RqJA
TJ(pk) - TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
Figure 18. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 17 by the
steady state value RqJA.
Example:
The BCW29LT1 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
10-2
10-1
100
101
102
103
-2
0
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V


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