BC808-40 datasheet(5/11 Pages) INFINEON

Part #	BC808-40

Description	PNP Silicon AF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 11 page

2007-06-08

5

BC807.../BC808...

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 16

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

A

IC

1

10

2

10

3

10

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 25

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

A

IC

1

10

2

10

3

10

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp. 40

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

A

IC

1

10

2

10

3

10

105 °C

85 °C

65 °C

25 °C

-40 °C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00215

CEsat

V

0.4

V

0.8

-1

100

101

3

10

5

Ι

C

mA

5

2

10

0.2

0.6

-50

25

150 ˚C

˚C

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BC808-40 Datasheet(PDF) 5 Page - Infineon Technologies AG

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