BSB014N04LX3G datasheet(6/11 Pages) INFINEON

Part #	BSB014N04LX3G

Description	OptiMOS3 Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSB014N04LX3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=30 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS; I D=250 µA

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

98 %

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-60

-20

20

60

100

140

180

T j [°C]

0

0.5

1

1.5

2

2.5

-60

-20

20

60

100

140

180

T j [°C]

Ciss

Coss

Crss

10

5

10

4

10

3

10

2

10

1

0

5

10

15

20

25

30

V DS [V]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

1

10

100

1000

0.0

0.5

1.0

1.5

2.0

V SD [V]

Rev. 2.0

page 6

2009-05-11

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BSB014N04LX3G Datasheet(PDF) 6 Page - Infineon Technologies AG

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