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BSB019N03LXG Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BSB019N03LXG
Description  OptiMOS2 Power-MOSFET
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB019N03LXG Datasheet(HTML) 3 Page - Infineon Technologies AG

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BSB019N03LX G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
6300
8400
pF
Output capacitance
C oss
-
2200
2900
Reverse transfer capacitance
Crss
-
280
-
Turn-on delay time
t d(on)
-10-
ns
Rise time
t r
-
7.8
-
Turn-off delay time
t d(off)
-42-
Fall time
t f
-
6.4
-
Gate Charge Characteristics
5)
Gate to source charge
Q gs
-18-
nC
Gate charge at threshold
Q g(th)
-10-
Gate to drain charge
Q gd
-12-
Switching charge
Q sw
-19-
Gate charge total
Q g
-44
59
Gate plateau voltage
V plateau
-
2.8
-
V
Gate charge total
Q g
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-92-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-38-
nC
Output charge
Q oss
V DD=15 V, V GS=0 V
-50-
Reverse Diode
Diode continuous forward current
I S
-
-
89
A
Diode pulse current
I S,pulse
-
-
400
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
0.78
1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50
nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
T C=25 °C
Values
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Rev. 2.0
page 3
2009-05-11


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