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BSB019N03LXG Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. BSB019N03LXG
Description  OptiMOS2 Power-MOSFET
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB019N03LXG Datasheet(HTML) 1 Page - Infineon Technologies AG

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BSB019N03LX G
OptiMOSTM2 Power-MOSFET
Features
• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
• Avalanche rated
• Qualified for consumer level application
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance
• Compatible with DirectFET® package MX footprint and outline
1)
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
V GS=10 V, T C=25 °C
174
A
V GS=10 V, T C=100 °C
110
V GS=10 V, T A=25 °C,
R thJA=45 K/W
2)
31
Pulsed drain current
3)
I D,pulse
T C=25 °C
400
Avalanche current, single pulse
4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
290
mJ
Gate source voltage
V GS
±20
V
Value
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
V DS
30
V
R DS(on),max
1.9
m
I D
174
A
Product Summary
Type
Package
Outline
Marking
BSB019N03LX G
2)
MG-WDSON-2
MX
1003
MG-WDSON-2
Rev. 2.0
page 1
2009-05-11


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