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BSB019N03LXG Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. BSB019N03LXG
Description  OptiMOS2 Power-MOSFET
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB019N03LXG Datasheet(HTML) 2 Page - Infineon Technologies AG

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BSB019N03LX G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Power dissipation
P tot
T C=25 °C
89
W
T A=25 °C,
R thJA=45 K/W
2)
2.8
Operating and storage temperature
T j, T stg
-40 ... 150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
-
1.0
K/W
top
-
-
1.4
Device on PCB
R thJA
6 cm
2 cooling area2)
--
45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=25 A
-
2.5
3.1
m
V GS=10 V, I D=30 A
-
1.6
1.9
Gate resistance
R G
-
1.0
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
60
120
-
S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2009-05-11


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