BSB019N03LXG datasheet(2/11 Pages) INFINEON

Part No.	BSB019N03LXG

Description	OptiMOS2 Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSB019N03LX G

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

89

W

T A=25 °C,

R thJA=45 K/W

2)

2.8

Operating and storage temperature

T j, T stg

-40 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

bottom

-

1.0

K/W

top

-

1.4

Device on PCB

R thJA

6 cm

2 cooling area2)

--

45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=250 µA

1

-

2.2

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=25 A

-

2.5

3.1

m

Ω

V GS=10 V, I D=30 A

-

1.6

1.9

Gate resistance

R G

-

1.0

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

60

120

-

S

3) See figure 3 for more detailed information

Value

Values

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.0

page 2

2009-05-11

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