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BSP299 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BSP299 Datasheet(HTML) 8 Page - Infineon Technologies AG |
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8 / 10 page  Rev 2.1 8 2009-03-25 BSP 299 Avalanche energy E AS = ƒ(Tj) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 Ω, L = 163 mH 20 40 60 80 100 120 °C 160 T j 0 10 20 30 40 50 60 70 80 90 100 110 120 mJ 140 E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 450 460 470 480 490 500 510 520 530 540 550 560 570 580 V 600 V (BR)DSS Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C 0 2 4 6 8 10 12 14 16 05 10 15 20 Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Typ. gate charge V GS =f(Q gate ); I D =0.4 A pulsed Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25° VDD =200 V V nC Q gate V GS |
Similar Part No. - BSP299_09 |
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Similar Description - BSP299_09 |
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