SPP08P06P datasheet(1/10 Pages) INFINEON

Part #	SPP08P06P

Description	P-Channel Enhancement mode Avalanche rated dv/dt rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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2009-04-14

Rev 1.5

Page 1

SPP08P06P G

SIPMOS® Power-Transistor

Features

· P-Channel

· Enhancement mode

· Avalanche rated

· dv/dt rated

· 175°C operating temperature

Product Summary

Drain source voltage

V

VDS

-60

Drain-source on-state resistance

RDS(on)

0.3

W

Continuous drain current

A

ID

-8.8

Type

Package

SPP08P06P G

PG-TO220-3

Pin 1

PIN 2/4

PIN 3

G

D

S

Maximum Ratings,at

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Unit

Value

-8.8

-6.2

Continuous drain current

TC = 25 °C

TC = 100 °C

A

ID

Pulsed drain current

TC = 25 °C

ID puls

-35.2

Avalanche energy, single pulse

ID = -8.8 A , VDD = -25 V, RGS = 25 W

70

mJ

EAS

Avalanche energy, periodic limited by

Tjmax

EAR

4.2

d

v/dt

6

Reverse diode d

v/dt

IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,

Tjmax = 175 °C

kV/µs

Gate source voltage

VGS

±20

V

Power dissipation

TC = 25 °C

Ptot

42

W

Operating and storage temperature

Tj , Tstg

-55...+175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

• Pb-free lead plating; RoHS compliant

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SPP08P06P Datasheet(PDF) 1 Page - Infineon Technologies AG

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