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IRFR4620PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR4620PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  06/08/09 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G IRFR4620PbF IRFU4620PbF GD S Gate Drain Source PD -96207A D S G DPak IRFR4620PbF IPAK IRFU4620PbF VDSS 200V RDS(on) typ. 64m: max. 78m : ID 24A Notes through are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. S D G D Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.045 RθJA Junction-to-Ambient (PCB Mount) i ––– 50 RθJA Junction-to-Ambient ––– 110 °C/W °C 113 See Fig. 14, 15, 22a, 22b, 300 144 54 -55 to + 175 ± 20 0.96 Max. 24 17 100 |
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Similar Description - IRFR4620PBF |
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