SPD30N03S2L-20 datasheet(7/9 Pages) INFINEON

Part #	SPD30N03S2L-20

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPD30N03S2L-20

13 Typ. avalanche energy

EAS = f (Tj)

par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω

25

45

65

85

105

125

145

°C

185

Tj

0

10

20

30

40

50

mJ

70

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = 30 A pulsed

0

2

4

6

8

10

12

14

16

18nC 21

QGate

0

2

4

6

8

10

12

V

16

SPD30N03S2L-20

0,8 VDS max

DS max

V

0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

parameter: ID=10 mA

-60

-20

20

60

100

140

°C

200

Tj

27

28

29

30

31

32

33

34

V

36

SPD30N03S2L-20

02-09-2008

Page 7

G

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SPD30N03S2L-20 Datasheet(PDF) 7 Page - Infineon Technologies AG

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