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IRGI4062DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGI4062DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGI4062DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 100µA e CT6 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.80— V/°C VGE = 0V, IC = 1mA (-55°C-150°C) CT6 —1.34 1.58 IC = 12A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 1.49 — V IC = 12A, VGE = 15V, TJ = 125°C 9,10,11 —1.54— IC = 12A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA 9, 10, ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -14 — mV/°C VCE = VGE, IC = 1.0mA (-55°C - 150°C) 11, 12 gfe Forward Transconductance — 13 — S VCE = 50V, IC = 12A, PW = 80µs ICES Collector-to-Emitter Leakage Current — — 25 µA VGE = 0V, VCE = 600V —— 250 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.70 2.05 V IF = 12A 8 —1.22— IF = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 48 72 IC = 12A 24 Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 18 27 VCC = 400V Eon Turn-On Switching Loss — 31 131 IC = 12A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 183 283 µJ RG = 10 Ω, L = 0.13mH, TJ = 25°C Etotal Total Switching Loss — 214 414 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 41 53 IC = 12A, VCC = 400V, VGE = 15V CT4 tr Rise time — 18 25 ns RG = 10 Ω, L = 0.13mH, TJ = 25°C td(off) Turn-Off delay time — 100 110 tf Fall time — 27 35 Eon Turn-On Switching Loss — 130 — IC = 12A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 275 — µJ RG=10 Ω, L= 0.13mH, TJ = 150°C eà CT4 Etotal Total Switching Loss — 405 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 39 — IC = 12A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 16 — ns RG = 10 Ω, L = 0.13mH CT4 td(off) Turn-Off delay time — 119 — TJ = 150°C WF1 tf Fall time — 39 — WF2 Cies Input Capacitance — 1528 — pF VGE = 0V 23 Coes Output Capacitance — 126 — VCC = 30V Cres Reverse Transfer Capacitance — 39 — f = 1.0Mhz TJ = 150°C, IC = 44A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 100 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3 Rg = 100 Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 362 — µJ TJ = 150°C 17, 18, 19 trr Diode Reverse Recovery Time — 56 — ns VCC = 400V, IF = 12A 20, 21 Irr Peak Reverse Recovery Current — 30 — A VGE = 15V, Rg = 10 Ω, L = 0.13mH WF3 Conditions |
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