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BSC077N12NS3G Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BSC077N12NS3G
Description  OptiMOS3 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC077N12NS3G Datasheet(HTML) 7 Page - Infineon Technologies AG

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BSC077N12NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
24 V
60 V
96 V
0
2
4
6
8
10
0
20
406080
Q gate [nC]
105
110
115
120
125
130
135
-60
-20
20
60
100
140
180
T j [°C]
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
25 °C
100 °C
125 °C
10
3
10
2
10
1
10
0
10
2
10
1
10
0
t AV [µs]
Rev. 2.5
page 7
2009-10-21


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