SPD30P06P_08 datasheet(7/10 Pages) INFINEON

Part #	SPD30P06P

Description	SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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7 / 10 page

2008-09-02

Rev 2.3

Page 7

SPD30P06P G

Drain-source on-state resistance

RDS(on) = f (Tj)

parameter :

ID = -21.5 A, VGS = -10 V

-60

-20

20

60

100

140

°C

200

Tj

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

W

0.24

SPD30P06P

typ

98%

Gate threshold voltage

VGS(th) = f (Tj)

parameter:

VGS = VDS, ID = -1.7 mA

-60

-20

20

60

100

°C

180

Tj

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

98%

-60

-20

20

60

100

°C

180

Tj

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

typ

-60

-20

20

60

100

°C

180

Tj

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

2%

-60

-20

20

60

100

°C

180

Tj

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

Typ. capacitances

C = f (VDS)

parameter:

VGS=0V, f=1 MHz

0

-5

-10

-15

-20

-25

V

-35

VDS

2

10

3

10

4

10

pF

Ciss

Coss

Crss

Forward characteristics of reverse diode

IF = f (VSD)

parameter:

Tj , tp = 80 µs

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4 V

-3.0

VSD

0

-10

1

-10

2

-10

3

-10

A

SPD30P06P

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 175 °C typ

T

j = 175 °C (98%)

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