SPD30P06P_08 datasheet(2/10 Pages) INFINEON

Part #	SPD30P06P

Description	SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 10 page

2008-09-02

Rev 2.3

Page 2

SPD30P06P G

Thermal Characteristics

Parameter

Symbol

Unit

Values

min.

max.

typ.

Characteristics

RthJC

-

1.2

-

Thermal resistance, junction - case

K/W

-

100

RthJA

Thermal resistance, junction - ambient, leaded

-

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

75

50

Electrical Characteristics, at

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -250 µA

V(BR)DSS

-60

-

V

-

Gate threshold voltage,

VGS = VDS

ID = -1.7 mA

-2.1

-3

-4

VGS(th)

Zero gate voltage drain current

VDS = -60 V, VGS = 0 V, Tj = 25 °C

VDS = -60 V, VGS = 0 V, Tj = 150 °C

µA

-1

-100

IDSS

-0.1

-10

-

IGSS

-

-10

-100

Gate-source leakage current

VGS = -20 V, VDS = 0 V

nA

Drain-source on-state resistance

VGS = -10 V, ID = -21.5 A

RDS(on)

-

0.069

0.075

W

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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SPD30P06P Datasheet(PDF) 2 Page - Infineon Technologies AG

SPD30P06P Datasheet(HTML) 2 Page - Infineon Technologies AG

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