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SPD30P06PG Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPD30P06PG Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 10 page 2008-09-02 Rev 2.3 Page 4 SPD30P06P G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Unit Values Symbol Parameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -30 A - Qgs nC 5.6 3.7 Gate to drain charge VDD = -48 V, ID = -30 A Qgd 13.8 20.7 - 48 - Qg Gate charge total VDD = -48 V, ID = -30 A, VGS = 0 to -10 V 32 Gate plateau voltage VDD = -48 V , ID = -30 A V(plateau) - -5.2 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - -30 A Inverse diode direct current,pulsed TC = 25 °C ISM - - -120 Inverse diode forward voltage VGS = 0 V, IF = -30 VSD - -1.3 -1.7 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 64.6 97 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Qrr - 153 230 nC |
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