 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
SPD30P06PG Datasheet(PDF) 4 Page - Infineon Technologies AG |
|
||||||||||||||||||||||||||||||
SPD30P06PG Datasheet(HTML) 4 Page - Infineon Technologies AG |
|
|
4 / 10 page  2008-09-02 Rev 2.3 Page 4 SPD30P06P G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Unit Values Symbol Parameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -30 A - Qgs nC 5.6 3.7 Gate to drain charge VDD = -48 V, ID = -30 A Qgd 13.8 20.7 - 48 - Qg Gate charge total VDD = -48 V, ID = -30 A, VGS = 0 to -10 V 32 Gate plateau voltage VDD = -48 V , ID = -30 A V(plateau) - -5.2 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - -30 A Inverse diode direct current,pulsed TC = 25 °C ISM - - -120 Inverse diode forward voltage VGS = 0 V, IF = -30 VSD - -1.3 -1.7 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 64.6 97 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Qrr - 153 230 nC |
Similar Part No. - SPD30P06PG |
|
Similar Description - SPD30P06PG |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
