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SPP07N60S5 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPP07N60S5 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 200 9-11-27 Rev. 2. 7 Page 1 SPP07N60S5 SPI07N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P G-TO262 PG-TO220 2 P-TO220-3-1 2 3 1 Type Package Ordering Code SPP07N60S5 P G-TO220 Q67040-S4172 SPI07N60S5 P G-TO262 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 A Pulsed drain current, t p limited by Tjmax ID puls 14.6 Avalanche energy, single pulse ID = - A, VDD = 50 V EAS 230 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 7.3 A, VDD = 50 V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C |
Similar Part No. - SPP07N60S5_09 |
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Similar Description - SPP07N60S5_09 |
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