SPB04N60S5_07 datasheet(2/11 Pages) INFINEON

Part #	SPB04N60S5

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 11 page

200

7-02-14

Rev. 2.

4

Page 2

SPB04N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 480 V, ID = 4.5 A, Tj = 125 °C

dv/dt

20

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

2.5

K/W

Thermal resistance, junction - ambient, leaded

RthJA

-

62

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

-

35

62

-

Soldering temperature, reflow soldering, MSL1

1.6 mm (0.063 in.) from case for 10s

Tsold

-

2

60

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

600

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=4.5A

-

700

-

Gate threshold voltage

VGS(th)

ID=200µΑ, VGS=VDS

3.5

4.5

5.5

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Tj=25°C,

Tj=150°C

-

0.5

-

1

50

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A,

Tj=25°C

Tj=150°C

-

0.85

2.3

0.95

-

Ω

Gate input resistance

RG

f=1MHz, open Drain

-

20

-

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