SPP24N60C3_09 datasheet(7/11 Pages) INFINEON

Part #	SPP24N60C3

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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7 / 11 page

200

9-12-01

Rev. 2.

5

Page 7

SPP24N60C3

9 Typ. gate charge

VGS = f (QGate)

parameter: ID = 24.3 A pulsed

0

20

40

60

80

100 120 140 nC 170

QGate

0

2

4

6

8

10

12

V

16

SPP24N60C3

0.2 V

DS max

0.8 V

DS max

10 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-1

10

0

10

1

10

2

10

A

SPP24N60C3

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

4

8

12

16

20

A

28

Tj(START)=125°C

Tj(START)=25°C

12 Avalanche energy

EAS = f (Tj)

par.: ID = 10 A, VDD = 50 V

25

50

75

100

°C

150

Tj

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

mJ

0.9

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SPP24N60C3 Datasheet(PDF) 7 Page - Infineon Technologies AG

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