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SKW25N120 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SKW25N120
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKW25N120 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SKW25N120
Power Semiconductors
3
Rev. 2_2
Sep 08
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
Min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
45
60
Rise time
tr
-
40
52
Turn-off delay time
td(off)
-
730
950
Fall time
tf
-
30
39
ns
Turn-on energy
Eon
-
2.2
2.9
Turn-off energy
Eoff
-
1.5
2.0
Total switching energy
Ets
Tj=25
°C,
VCC=800V,IC=25A,
VGE=15/0V,
RG=22
Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
3.7
4.9
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
tF
-
-
-
90
ns
Diode reverse recovery charge
Qrr
-
1.0
µC
Diode peak reverse recovery current
Irrm
-
20
A
Diode peak rate of fall of reverse
recovery current during tF
dirr/dt
Tj=25
°C,
VR=800V, IF=25A,
diF/dt=650A/
µs
-
470
A/
µs
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
Min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
50
60
Rise time
tr
-
36
43
Turn-off delay time
td(off)
-
820
990
Fall time
tf
-
42
50
ns
Turn-on energy
Eon
-
3.8
4.6
Turn-off energy
Eoff
-
2.9
3.8
Total switching energy
Ets
Tj=150
°C
VCC=800V,IC=25A,
VGE=15/0V,
RG=22
Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
6.7
8.4
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
tF
-
-
-
280
ns
Diode reverse recovery charge
Qrr
-
4.3
µC
Diode peak reverse recovery current
Irrm
-
32
A
Diode peak rate of fall of reverse
recovery current during tF
dirr/dt
Tj=150
°C
VR=800V, IF=25A,
diF/dt=750A/
µs
-
130
A/
µs
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.


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