SKW20N60_08 datasheet(1/13 Pages) INFINEON

Part #	SKW20N60

Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKW20N60

1

Rev. 2_2

Sep 08

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Very soft, fast recovery anti-parallel EmCon diode

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1 for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC

VCE(sat)

Tj

Marking

Package

SKW20N60

600V

20A

2.4V

150

°C

K20N60

PG-TO-247-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

600

V

DC collector current

TC = 25

°C

TC = 100

°C

IC

40

20

Pulsed collector current, tp limited by Tjmax

ICpuls

80

Turn off safe operating area

VCE

≤ 600V, Tj ≤ 150°C

-

80

Diode forward current

TC = 25

°C

TC = 100

°C

IF

40

20

Diode pulsed current, tp limited by Tjmax

IFpuls

80

A

Gate-emitter voltage

VGE

±20

V

Short circuit withstand time

2

VGE = 15V, VCC

≤ 600V, Tj ≤ 150°C

tSC

10

µs

Power dissipation

TC = 25

°C

Ptot

179

W

Soldering temperature

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

Ts

260

°C

Operating junction and storage temperature

Tj , Tstg

-55...+150

°C

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

PG-TO-247-3

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SKW20N60 Datasheet(PDF) 1 Page - Infineon Technologies AG

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