Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

IKP03N120H2 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IKP03N120H2
Description  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKP03N120H2 Datasheet(HTML) 3 Page - Infineon Technologies AG

  IKP03N120H2_08 Datasheet HTML 1Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 2Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 3Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 4Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 5Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 6Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 7Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 8Page - Infineon Technologies AG IKP03N120H2_08 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 15 page
background image
IKP03N120H2
IKW03N120H2
Power Semiconductors
3
Rev. 2.5 Sept. 08
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9.2
-
Rise time
tr
-
5.2
-
Turn-off delay time
td(off)
-
281
-
Fall time
tf
-
29
-
ns
Turn-on energy
Eon
-
0.14
-
Turn-off energy
Eoff
-
0.15
-
Total switching energy
Ets
Tj=25
°C,
VCC=800V, IC=3A,
VGE=15V/0V,
RG=82
Ω,
Lσ
2) =180nH,
Cσ
2) =40pF
Energy losses include
“tail” and diode
3)
reverse recovery.
-
0.29
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
42
-
ns
Diode reverse recovery charge
Qrr
-
0.23
-
µC
Diode peak reverse recovery current
Irrm
-
10.3
-
A
Diode current slope
diF/dt
-
993
-
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25
°C,
VR=800V, IF=3A,
RG=82
Ω
-
1180
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9.4
-
Rise time
tr
-
6.7
-
Turn-off delay time
td(off)
-
340
-
Fall time
tf
-
63
-
ns
Turn-on energy
Eon
-
0.22
-
Turn-off energy
Eoff
-
0.26
-
Total switching energy
Ets
Tj=150
°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82
Ω,
Lσ
2) =180nH,
Cσ
2) =40pF
Energy losses include
“tail” and diode
3)
reverse recovery.
-
0.48
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
125
-
ns
Diode reverse recovery charge
Qrr
-
0.51
-
µC
Diode peak reverse recovery current
Irrm
-
12
-
A
Diode current slope
diF/dt
-
829
-
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=150
°C
VR=800V, IF=3A,
RG=82
Ω
-
540
-
A/
µs
2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3) Commutation diode from device IKP03N120H2


Similar Part No. - IKP03N120H2_08

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...		 IKP03N120H2 INFINEON-IKP03N120H2 Datasheet
431Kb / 15P		    HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2, Mar-04
More results

Similar Description - IKP03N120H2_08

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...		 IKP03N120H2 INFINEON-IKP03N120H2 Datasheet
431Kb / 15P		    HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2, Mar-04
IKA03N120H2 INFINEON-IKA03N120H2 Datasheet
335Kb / 14P		    HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Mar-04, Rev. 2
IKB01N120H2 INFINEON-IKB01N120H2 Datasheet
385Kb / 14P		    HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2.3 May 06
IKP01N120H2 INFINEON-IKP01N120H2 Datasheet
387Kb / 14P		    HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2.3 May 06
IKA10N60T INFINEON-IKA10N60T Datasheet
368Kb / 13P		    IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2 Oct-04
IHW40T120 INFINEON-IHW40T120 Datasheet
354Kb / 14P		    IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2 Mar-04
IKB15N60T INFINEON-IKB15N60T Datasheet
398Kb / 13P		    IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2.1 Dec-04
IKP20N60T INFINEON-IKP20N60T Datasheet
435Kb / 15P		    IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
Rev. 2.2 Dec-04
IHW15T120 INFINEON-IHW15T120 Datasheet
339Kb / 14P		    IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
Rev. 2.3 Sep 08
SKP10N60A INFINEON-SKP10N60A_08 Datasheet
368Kb / 14P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Rev. 2.3 Sep 08
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com