IKP04N60T_09 datasheet(7/14 Pages) INFINEON

Part #	IKP04N60T

Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IKP04N60T

TrenchStop

® Series

pIJIKI04N60Tdsadsa

Power Semiconductors

7

Rev. 2.5 Feb. 09

0A

2A

4A

6A

0.0m J

0.1m J

0.2m J

0.3m J

E

ts*

E

off

*) E

on and E tsin clude lo sses

due to diode recovery

E

on*

25Ω 50Ω

100Ω

150Ω

200Ω

250Ω

0.0 mJ

0.1 mJ

0.2 mJ

0.3 mJ

0.4 mJ

E

ts*

E

on*

*) E

on and Ets include losses

due to diode recovery

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 47Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 4A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C 100°C 125°C 150°C

0µJ

25µJ

50µJ

75µJ

100µJ

125µJ

150µJ

175µJ

E

ts*

E

on*

*) E

on an d E ts in clude lo sses

due to diode recovery

E

off

300V

350V

400V

450V

0.00m J

0.05m J

0.10m J

0.15m J

0.20m J

0.25m J

E

ts*

E

on*

*) E

on a nd E ts in clu de lo s s e s

due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 4A, RG = 47Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 4A, RG = 47Ω,

Dynamic test circuit in Figure E)

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IKP04N60T Datasheet(PDF) 7 Page - Infineon Technologies AG

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