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SIGC100T60R3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC100T60R3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page SIGC100T60R3 Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 IGBT 3 Chip This chip is used for: • power module Features: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE IC Die Size Package SIGC100T60R3 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Parameter Raster size 9.73 x 10.23 Emitter pad size (incl. gate pad) ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 Gate pad size 1.615 x 0.817 Area total 99.5 mm 2 Thickness 70 µm Wafer size 150 mm Max.possible chips per wafer 126 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size ∅ 0.65mm ; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C |
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