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SMBT3904PN Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SMBT3904PN Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2007-03-28 2 SMBT3904...PN Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) SMBT3904PN SMBT3904UPN RthJS ≤ 140 ≤ 135 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 40 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 40 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 6 - - Collector-base cutoff current VCB = 30 V, IE = 0 ICBO - - 50 nA DC current gain2) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 40 70 100 60 30 - - - - - - - 300 - - - Collector-emitter saturation voltage2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat - - - - 0.25 0.4 V Base emitter saturation voltage2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.65 - - - 0.85 0.95 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% |
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