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SIDC14D60F6 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SIDC14D60F6 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page SIDC14D60F6 Edited by INFINEON Technologies, IMM PSD, L4174M, Edition 2.1, 09.03.2010 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 600 V Continuous forward current IF Tvj < 150°C 1 ) Maximum repetitive forward current IFRM Tvj < 150°C 90 A Junction temperature range Tvj -40...+175 °C Operating junction temperature Tvj -40...+150 °C Dynamic ruggedness² ) Pmax IFmax = 90A, VRmax = 600V, Tvj ≤ 150°C tbd kW 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation Static Characteristic (tested on wafer), Tvj = 25 °C Value Parameter Symbol Conditions min. typ. max. Unit Reverse leakage current IR VR=600V 27 µA Cathode-Anode breakdown Voltage VBR IR=3mA 600 V Diode forward voltage VF IF=45A 1.6 V Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. |
Similar Part No. - SIDC14D60F6_10 |
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Similar Description - SIDC14D60F6_10 |
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