SMBTA06UPN_07 datasheet(2/7 Pages) INFINEON

Part #	SMBTA06UPN

Description	NPN / PNP Silicon AF Transistor Array High breakdown voltage

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 7 page

2007-04-27

2

SMBTA06UPN

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

≤ 105

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

80

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO

80

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

4

-

Collector-base cutoff current

VCB = 80 V, IE = 0

VCB = 80 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

20

µA

Collector-emitter cutoff current

VCE = 60 V, IB = 0

ICEO

-

100

nA

DC current gain2)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

hFE

100

-

Collector-emitter saturation voltage2)

IC = 100 mA, IB = 10 mA

VCEsat

-

0.25

V

Base-emitter voltage2)

IC = 100 mA, VCE = 1 V

VBE(ON)

-

1.2

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

fT

-

100

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

7

-

pF

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Pulse test: t < 300µs; D < 2%

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