SIGC10T60S

Edited by INFINEON Technologies AI PS DD CLS, L7541D, Edition 2, 26.01.2005

IGBT

3

Chip

This chip is used for:

•

power module

•

discrete components

FEATURES:

•

600V Trench & Field Stop technology

•

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

•

white goods

•

resonant applications

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC10T60S

600V

20A

3.19 x 3.21 mm

2

sawn on foil

Q67050-

A4361-A101

MECHANICAL PARAMETER:

Raster size

3.19 x 3.21

Emitter pad size

2.004 x 2.413

Gate pad size

0.361 x 0.513

mm

2

Area total / active

10.2 / 7.1

mm

2

Thickness

70

µm

Wafer size

150

mm

Flat position

0

deg

Max. possible chips per wafer

1363 pcs

Passivation frontside

Photoimide

Emitter metallization

3200 nm AlSiCu

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

∅ 0.65mm ; max 1.2mm

Recommended storage environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C