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SIGC10T60S Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC10T60S Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC10T60S Edited by INFINEON Technologies AI PS DD CLS, L7541D, Edition 2, 26.01.2005 IGBT 3 Chip This chip is used for: • power module • discrete components FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives • white goods • resonant applications G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC10T60S 600V 20A 3.19 x 3.21 mm 2 sawn on foil Q67050- A4361-A101 MECHANICAL PARAMETER: Raster size 3.19 x 3.21 Emitter pad size 2.004 x 2.413 Gate pad size 0.361 x 0.513 mm 2 Area total / active 10.2 / 7.1 mm 2 Thickness 70 µm Wafer size 150 mm Flat position 0 deg Max. possible chips per wafer 1363 pcs Passivation frontside Photoimide Emitter metallization 3200 nm AlSiCu Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size ∅ 0.65mm ; max 1.2mm Recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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