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SIDC73D170E6 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIDC73D170E6 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIDC73D170E6 Edited by INFINEON Technologies, AIM PMD D CID CLS, L4381N, Edition 1.2, 28.0 7.2008 Fast switching diode chip in Emitter Controlled -Technology This chip is used for: • power modules and discrete devices Features: • 1700V technology, Emitter Controlled • soft, fast switching • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, drives A C Chip Type VR IF Die Size Package SIDC73 D170E6 1700V 100A 8.53 x 8.53 mm 2 sawn on foil Mechanical Parameter Raster size 8.53 x 8.53 Area total 72.76 Anode pad size 6.51 x 6.51 mm 2 Thickness 200 µm Wafer size 150 mm Max. possible chips per wafer 189 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤500µm Reject ink dot size ∅ 0.65mm; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen,in dark environment, < 6 month at an ambient temperature of 23°C |
Similar Part No. - SIDC73D170E6_08 |
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Similar Description - SIDC73D170E6_08 |
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