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FC802 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FC802 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page 22898HA (KT)/52595GI (KOTO) 169MO, TS 84995 No.3108-1/2 FC802 Ordering number :EN3108B Composite Diode for High-Speed Switching Applications SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Silicon Epitaxal Planar Diode Electrical Characteristics at Ta = 25˚C Features · Composite type with 4 diodes cintained in the CP package currently in use, resulting in the greatly improved circuit board using efficiency. · The FC802 is formed with two chips, each being equivalent to the DCB015, placed in one package. · Fast switching speed. Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 1233A [FC802] 1:Anode 2:Anode 3:Cathode 4:Anode 5:Anode 6:Cathode SANYO:CP6 Reverse Recovery Time Test Circuit Note) The specifications shown above are for each individual diode. · Marking:802 Electrical Connection r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e PV M R 5 7V e g a t l o V e s r e v e RVR 0 5V t n e r r u C e g r u SI M S F s µ 1 4A t n e r r u C d e i f i t c e R e g a r e v AIO 0 0 1A m t n e r r u C d r a w r o F k a e PI M F 0 0 3A m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 0 5 – ˚C ˚C r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V d r a w r o FVF IF A m 0 1 =2 7 . 00 . 1V IF A m 0 5 =5 8 . 00 . 1V IF A m 0 0 1 =2 9 . 02 . 1V t n e r r u C e s r e v e RIR VR V 0 5 = 0 0 1A n e c n a t i c a p a C l a m i m r e t r e t n IC VR z H M 1 = f , V 0 =0 . 40 . 7F p e m i T y r e v o c e R e s r e v e Rr r tIF V , A m 0 1 = R R , V 6 = L 0 5 = Ω I , r r p r I 1 . 0 =0 . 5s n |
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