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IRFB5615PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFB5615PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRFB5615PbF 2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 21A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Rθ is measured at TJ of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 32 39 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 35 ––– ––– S Qg Total Gate Charge ––– 26 40 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– Qgd Gate-to-Drain Charge ––– 9.0 ––– Qgodr Gate Charge Overdrive ––– 8.9 ––– See Fig. 6 and 19 Qsw Switch Charge (Qgs2 + Qgd) ––– 11 ––– RG(int) Internal Gate Resistance ––– 2.7 5.0 Ω td(on) Turn-On Delay Time ––– 8.9 ––– tr Rise Time ––– 23.1 ––– td(off) Turn-Off Delay Time ––– 17.2 ––– tf Fall Time ––– 13.1 ––– Ciss Input Capacitance ––– 1750 ––– Coss Output Capacitance ––– 155 ––– Crss Reverse Transfer Capacitance ––– 40 ––– Coss Effective Output Capacitance ––– 175 ––– LD Internal Drain Inductance Between lead, 6mm (0.25in.) LS Internal Source Inductance from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energyd mJ IAR Avalanche Current Ãg A EAR Repetitive Avalanche Energy g mJ Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 80 120 ns Qrr Reverse Recovery Charge ––– 312 468 nC ––– ––– ––– A 35 140 ––– ––– ––– ––– ––– 7.5 µA nA nC ns MOSFET symbol RG = 2.4Ω VDS = 50V, ID = 21A Conditions and center of die contact VDD = 75V, VGS = 10VÃe VDS =75V VDS = 50V VDS = VGS, ID = 100µA VDS = 150V, VGS = 0V VGS = 0V, VDS = 0V to 120V VDS = 150V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V ID = 21A VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 21A e TJ = 25°C, IF = 21A, VR =120V di/dt = 100A/µs e TJ = 25°C, IS = 21A, VGS = 0V e showing the integral reverse p-n junction diode. ID = 21A Typ. Max. ƒ = 1.0MHz, See Fig.5 pF nH 4.5 ––– 109 See Fig. 14, 15, 17a, 17b |
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