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IRF7805QPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF7805QPBF
Description  Advanced Process TechnologyUltra Low On-Resistance
Download  5 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7805QPBF Datasheet(HTML) 1 Page - International Rectifier

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Device Features
IRF7805QPbF
www.irf.com
1
08/09/10
SO-8
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
N Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Lead-Free
Description
These HEXFET® Power MOSFET's in package utilize
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's
are a 150°C
junction
operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramatically reduce board space and is also available
in Tape & Reel.
IRF7805Q
VDS
30V
RDS(on)
11mΩ
Qg
31nC
Qsw
11.5nC
Qoss
36nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
e
W
PD @TA = 70°C
Power Dissipation
e
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
h
–––
20
°C/W
RθJA
Junction-to-Ambient
eh
–––
50
-55 to + 150
2.5
0.02
1.6
Max.
13
10
100
± 12
30
PD – 96114A


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