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IRF7805QPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7805QPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 5 page Top V iew 8 1 2 3 4 5 6 7 D D D D G S A S S Device Features IRF7805QPbF www.irf.com 1 08/09/10 SO-8 l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7805Q VDS 30V RDS(on) 11mΩ Qg 31nC Qsw 11.5nC Qoss 36nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation e W PD @TA = 70°C Power Dissipation e Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead h ––– 20 °C/W RθJA Junction-to-Ambient eh ––– 50 -55 to + 150 2.5 0.02 1.6 Max. 13 10 100 ± 12 30 PD – 96114A |
Similar Part No. - IRF7805QPBF_08 |
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Similar Description - IRF7805QPBF_08 |
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