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LMP8640HVMK-H Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMP8640HVMK-H
Description  Precision High Voltage Current Sense Amplifier
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMP8640HVMK-H Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Symbol
Parameter
Condition
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
BW
Fixed Gain LMP8640-T
LMP8640HV-T (Note 9)
DC V
SENSE = 67.5 mV,
C
L = 30 pF ,RL= 1MΩ
950
kHz
Fixed Gain LMP8640-F
LMP8640HV-F (Note 9)
DC V
SENSE =27 mV,
C
L = 30 pF ,RL= 1MΩ
450
Fixed Gain LMP8640-H
LMP8640HV-H (Note 9)
DC V
SENSE = 13.5 mV,
C
L = 30 pF ,RL= 1MΩ
230
SR
Slew Rate (Note 8, Note 9)
V
CM =5V, CL = 30 pF, RL = 1MΩ,
LMP8640-T LMP8640HV-T V
SENSE =500mVpp,
LMP8640-F LMP8640HV-F V
SENSE =200mVpp,
LMP8640-H LMP8640HV-H V
SENSE =100mVpp,
1.8
V/µs
R
IN
Differential Mode Input Impedance
(Note 9)
5
k
I
S
Supply Current
V
CM = 2.1V
720
1050
1250
µA
V
CM = −2V
2300
2800
3000
V
OUT
Maximum Output Voltage
V
CM = 2.1V
11.85
V
Minimum Output Voltage
LMP8640-T LMP8640HV-T
V
CM = 2.1V
18.2
mV
LMP8640-F LMP8640HV-F
V
CM = 2.1V
40
LMP8640-H LMP8640HV-H
V
CM = 2.1V
80
C
LOAD
Max Output Capacitance Load
(Note 9)
30
pF
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Operating Ratings is not implied. Operating Ratings indicate conditions at which the device is functional and the device should not be operated beyond such
conditions.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
J(MAX), θJA, and the ambient temperature, TA. The maximum
allowable power dissipation P
DMAX = (TJ(MAX) - TA)/ θJA or the number given in Absolute Maximum Ratings, whichever is lower.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T
J = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ >
T
A. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
Note 5: Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend
on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality
control (SQC) method.
Note 7: Offset voltage temperature drift is determined by dividing the change in V
OS at the temperature extremes by the total temperature change.
Note 8: The number specified is the average of rising and falling slew rates and measured at 90% to 10%.
Note 9: This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 10: Positive Bias Current corresponds to current flowing into the device.
5
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