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FP402 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FP402 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page 52098HA (KT)/41095TS (KOTO) TA-0099 No.5048-1/3 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number:EN5048 FP402 N-Channel MOS Silicon FET Very High-Speed Switching Applicaitons r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r B S - DV S S D ) R B ( ID V , A m 1 = S G 0 =0 2V t n e r r u C n i a r D e g a t l o V e t a G o r e ZI S S D V S D V , V 0 2 = S G 0 =0 0 1A µ t n e r r u C e g a k a e L e c r u o S - o t - e t a GI S S G V S G V , V 2 1 ± = S D 0 =0 1 ±A µ e g a t l o V f f o t u CV ) f f o ( S G V S D I , V 0 1 = D A m 1 =8 . 00 . 2V e c n a t t i m d A r e f s n a r T d r a w r o FY | s f |V S D I , V 0 1 = D A m 0 0 5 =6 . 00 . 1S e c n a t s i s e R e t a t S - N O e c r u o S - o t - n i a r D c i t a t SR ) n o ( S D ID V , A m 0 0 5 = S G V 0 1 =0 5 30 8 4m Ω R ) n o ( S D ID V , A m 0 0 5 = S G V 4 =0 5 50 5 7m Ω e c n a t i c a p a C t u p n Is s i CV S D z H M 1 = f , V 0 1 =0 5F p e c n a t i c a p a C t u p t u Os s o CV S D z H M 1 = f , V 0 1 =5 4F p e c n a t i c a p a C r e f s n a r T e s r e v e Rs s r CV S D z H M 1 = f , V 0 1 =5 1F p e m i T y a l e D N O - n r u Tt ) n o ( d t i u c r i C t s e T d e i f i c e p s e e S8 s n e m i T e s i Rtr t i u c r i C t s e T d e i f i c e p s e e S0 1s n e m i T y a l e D F F O - n r u Tt ) f f o ( d t i u c r i C t s e T d e i f i c e p s e e S0 3s n e m i T ll a Ftf t i u c r i C t s e T d e i f i c e p s e e S0 2s n e g a t l o V d r a w r o F e d o i DV D S IS V , A 1 = S G 0 =0 . 1V r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e c r u o S - o t - n i a r DV S S D 0 2V e g a t l o V e c r u o S - o t - e t a GV S S G 5 1 ±V ) C D ( t n e r r u C n i a r DID 1A ) e s l u P ( t n e r r u C n i a r DI P D 4A n o i t a p i s s i D r e w o P e l b a w o ll A PD 0 . 2W PD 8 . 0W n o i t a p i s s i D r e w o P l a t o TPT 1 . 1W e r u t a r e p m e T l e n n a h Ch c T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2102A [FP402] Features · Low ON resistance. · Very high-speed switching. · Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection Marking:402 ˚C Mounted on ceramic board (250mm2 ×0.8mm) 1 unit ˚C Electrical Characteristics at Ta=25˚C Mounted on ceramic board (250mm2 ×0.8mm) 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain SANYO:PCP5 (Bottom view) 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) Tc=25˚C, 1 unit PW ≤10µs, duty cycle ≤1% |
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