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FQP10N50CF Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQP10N50CF Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FQP10N50CF FQP10N50CF TO-220 - - 50 FQPF10N50CF FQPF10N50CF TO-220F - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA VDS = 400V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 5A -- 0.5 0.61 Ω gFS Forward Transconductance VDS = 40V, ID = 5A (Note 4) -- 15 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1610 2096 pF Coss Output Capacitance -- 177 230 pF Crss Reverse Transfer Capacitance -- 16 24 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 10A RG = 25Ω (Note 4, 5) -- 29 67 ns tr Turn-On Rise Time -- 80 170 ns td(off) Turn-Off Delay Time -- 141 290 ns tf Turn-Off Fall Time -- 80 165 ns Qg Total Gate Charge VDS = 400V, ID = 10A VGS = 10V (Note 4, 5) -- 43 56 nC Qgs Gate-Source Charge -- 7.5 -- nC Qgd Gate-Drain Charge -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 10A dIF/dt =100A/µs (Note 4) -- 50 ns Qrr Reverse Recovery Charge -- 0.1 -- µC |
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Similar Description - FQP10N50CF_08 |
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