MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM5964-45SL

TECHNICAL DATA

FEATURES

n LOW INTERMODULATION DISTORTION

n HIGH GAIN

IM3=-45 dBc at Pout= 35.5dBm

G1dB=9.0dB at 5.9GHz to 6.4GHz

Single Carrier Level

n BROAD BAND INTERNALLY MATCHED FET

n HIGH POWER

n HERMETICALLY SEALED PACKAGE

P1dB=46.5dBm at 5.9GHz to 6.4GHz

RF PERFORMANCE SPECIFICATIONS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP. MAX.

Output Power at 1dB Gain

Compression Point

dBm

46.0

46.5



Power Gain at 1dB Gain

Compression Point

dB

8.0

9.0



Drain Current

A



9.6

10.8

Gain Flatness

∆G

dB





±0.8

Power Added Efficiency

VDS=10V

f = 5.9 to 6.4GHz

%



41



3rd Order Intermodulation

Distortion

Two-Tone Test

Po=35.5dBm

(Single Carrier Level)

dBc

-42

-45



Channel Temperature Rise

∆Tch

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

°C





100

Recommended Gate Resistance(Rg) : 28

Ω (Max.)

ELECTRICAL CHARACTERISTICS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP.

MAX.

Transconductance

gm

mS



8000



Pinch-off Voltage

V

-1.0

-2.5

-4.0

Saturated Drain Current

A



24



Gate-Source Breakdown

Voltage

µA

V

-5





Thermal Resistance

Channel to Case

°C/W



0.8

1.2

u

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul. 2006