FM1105 - Automotive Temp.
Rev. 3.0
Apr. 2009
Page 5 of 8
AC Parameters (TA = -40° C to +125° C, VDD = 4.5V to 5.5V, CL = 30 pF unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
fMAX
Maximum Clock Frequency
-
1
MHz
tLOW
CLK Low Period
0.3
-
µs
tHIGH
CLK High Period
0.3
-
µs
tPD
Propagation delay CLK to QN
-
50
ns
tHZ
EN Low to QN Hi-Z
-
25
ns
1
tR
Input Rise Time
-
100
ns
1
tF
Input Fall Time
-
100
ns
1
tDS
Data (DN) Setup Time to CLK ↑
5
-
ns
tDH
Data (DN) Hold Time after CLK ↑
10
-
ns
tEHD
EN Hold Time (EN High after CLK
↑)
50
-
ns
tEH
EN High Time
5
-
µs
tEL
EN Low Time
2
-
µs
Notes
1. This parameter is characterized but not tested.
Power Cycling and Data Retention (TA = -40° C to +125° C, VDD = 4.5V to 5.5V, unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
Nonvolatile Data Retention Time
45
-
years
tVDR
VDD Rise Time
25
-
µs/V
1
tVDF
VDD Fall Time
50
-
µs/V
1
tRES
EN High to QN Restore Time
-
0.5
µs
2
tPDS
EN Low to Power Down Time
1
-
µs
tEHFC
EN High to First Clock (CLK
↑) after Power Up
4
-
µs
3
Notes
1.
Slope measured at any point on VDD waveform.
2.
After power up, when EN goes high the nonvolatile latches are read and the values restored to the outputs QN.
3.
After power up, this is the minimum time required before a state change operation may occur. EN and VDD may be
coincident at power up, and in this case tEHFC time is referenced to VDD (min) and CLK ↑.
Data Retention (VDD = 4.5V to 5.5V)
Parameter
Min
Max
Units
Notes
Data Retention
@
TA = 85°C
@
TA = 125°C
45
9000
-
-
Years
Hours
Note: The device is guaranteed to retain data after both conditions have been applied: (1) 45 yrs at a temperature of
85
°C and (2) 9000 hours at 125°C.
Typical Grade 1 Operating Profile
0
200
400
600
800
1000
1200
1400
1600
70
75
80
85
90
95 100 105 110 115 120 125
Temperature (°C)
Typical Grade 1 Storage Profile
0
5000
10000
15000
20000
25000
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Temperature (°C)