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1N4531 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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1N4531 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit VRRM 75 V VRM 75 V Maximum Continuous Forward Current IF mA Maximum Repetitive Peak Forward Current IFRM 450 mA Maximum Power Dissipation (1) PD 500 mW Maximum Surge Forward Current at t < 1s, Tj = 25 °C IFSM 0.5 A Maximum Junction Temperature TJ 200 °C Storage Temperature Range TS -65 to + 200 °C Electrical Characteristics (Tj = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit VR = 20 V - - 25 nA VR = 20 V , Tj = 150 °C- - 5 μA VR = 50 V - - 100 nA VR = 50 V , Tj = 150 °C - - 100 μA Forward Voltage VF IF = 10 mA -- 1 V Diode Capacitance 1N4531 - - 4.0 1N4532 - - 2.0 IF = 10 mA to IR = 60mA 1N4531 RL = 100 Ω ; Measured - - 4 ns 1N4532 at IR = 1 mA -- 2 ns Page 1 of 2 Rev. 03 : December 3, 2008 200 IR 1N4532 1N4531 Test Condition Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Reverse Current pF Reverse Recovery Time Trr Cd f = 1MHz ; VR = 0 DO - 34 Glass Dimensions in inches and ( millimeters ) 0.078 (2.0 )max. 0.118 (3.0) max. 0.017 (0.43)max. 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
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