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10ELS2 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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10ELS2 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  10ELS1 ~ 10ELS6 FAST RECOVERY DIODE PRV : 100 ~ 400 Volts Io : 1.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 10ELS1 10ELS2 10ELS4 10ELS6 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 100 200 400 600 V Maximum RMS Voltage VRMS 70 140 210 280 V Maximum DC Blocking Voltage VDC 100 200 400 600 V Maximum Average Forward Current IF(AV) 1.0 A Maximum Peak Forward Surge Current, 8.3ms Single half sine wave Maximum Peak Forward Voltage at IF = 1.0 A VF 1.1 1.15 V Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time ( Note 1 ) Trr 150 ns Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Note : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. Page 1 of 2 Rev. 02 : March 25, 2005 IRM 10 µA RATING IFSM 30 A D2 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
Similar Part No. - 10ELS2 |
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Similar Description - 10ELS2 |
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