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LA4261 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LA4261 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page Operating Characteristics at Ta = 25°C, VCC =16 V,RL =8 Ω,f=1 kHz, Rg = 600 Ω, (circuit 1) Parameter Symbol Conditions min typ max Unit Quiescent current ICCO 46 62 mA Voltage gain VG 48 50 52 dB Output power PO THD = 10% 3.0 3.5 W Total harmonic distortion THD PO = 0.5 W 0.3 1.0 % Output noise voltage VNO Rg=10k Ω, BW = 20 Hz to 20 kHz 0.65 1.5 mV Ripple rejection ratio Rr Rg = 0, Vr = 500 mV 40 50 dB Crosstalk CT Rg = 10 k Ω 40 55 dB Voltage gain difference ∆VG 1.5 dB Equivalent Circuit Block Diagram Pd max – Ta Al heat sink Tightening torque 39 Nccm Silicon grease applied Thermal resistance between junction and outside air θj-c 10°C/W Ambient temperature, Ta – °C θ f –Sf Al heat sink t = 1.5 mm Area of heat sink, Sf –cm 2 Infinite heat sink 2.5 No heat sink LA4261 No.1321-2/8 |
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