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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 863, REV -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

MAXIMUM RATINGS

ALL RATINGS ARE AT T

A

= 25

°C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

GATE TO SOURCE VOLTAGE

-

-

±20

Volts

CONTINUOUS DRAIN CURRENT

-

-

75

60

Amps

PULSED DRAIN CURRENT

-

-

300

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

°C

TERMAL RESISTANCE JUNCTION TO CASE

-

-

0.30

°C/W

-

-

300

Watts

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

100

-

-

Volts

DRAIN TO SOURCE ON STATE RESISTANCE

-

-

0.02

0.035

Ω

GATE THRESHOLD VOLTAGE

2.0

-

4.0

Volts

FORWARD TRANSCONDUCTANCE

25

-

-

S(1/

Ω)

ZERO GATE VOLTAGE DRAIN CURRENT,

-

-

250

1000

μA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

-

-

100

-100

nA

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE

GATE TO DRAIN CHARGE

-

180

36

85

260

70

160

nC

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

-

20

40

50

20

30

40

75

40

nsec

DIODE FORWARD VOLTAGE

-

-

1.3

Volts

REVERSE RECOVERY TIME

di/dt

≤ = 100A/μsec,

REVERSE RECOVERY CHARGE

-

-

200

1.4

nsec

μC

INPUT CAPACITANCE

OUTPUT CAPACITANCE

f=1MHz

REVERSE TRANSFER CAPACITANCE

-

4500

1600

800

-

pF

SHD218602

SHD218602A

SHD218602B