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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4051, REV -

HERMETIC POWER MOSFET

P-CHANNEL

FEATURES:

DS (on)

MAXIMUM RATINGS

ALL RATINGS ARE AT T

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

GATE TO SOURCE VOLTAGE

-

-

–20

Volts

•C

•C

-

-

-18

-11

Amps

PULSED DRAIN CURRENT

•C

-

-

-72

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

•C

TERMAL RESISTANCE JUNCTION TO CASE

-

-

0.4

•C/W

•C

-

-

300

Watts

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

-100

-

-

Volts

DRAIN TO SOURCE ON STATE RESISTANCE

-

-

0.20

0.22

W

GATE THRESHOLD VOLTAGE

mA

-2.0

-

-4.0

Volts

FORWARD TRANSCONDUCTANCE

˜ -15V, I

6.2

-

-

S(1/

W)

ZERO GATE VOLTAGE DRAIN CURRENT

•C

-

-

-25

-250

mA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

-

-

-100

100

nA

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE

GATE TO DRAIN CHARGE

31

3.7

7.0

-

60

13

35.2

nC

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

W

FALL TIME

-

-

35

85

85

65

nsec

DIODE FORWARD VOLTAGE

•C, I

-

-

-4.2

Volts

DIODE REVERSE RECOVERY TIME

•C,

REVERSE RECOVERY CHARGE

di/dt = -100A/

msec,

ˆ -50V

-

-

280

3.6

nsec

mC

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

f = 1.0MHz

DRAIN TO CASE CAPACITANCE

-

1400

600

200

12

-

pF

SHD239409