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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5191, Rev. -

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC

HERMETIC TO-254 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE)

FEATURES:

high frequency; use part number prefix SHDG

MAXIMUM RATINGS

RATING

SYMBOL

MAX.

UNITS

PEAK INVERSE VOLTAGE

PIV

1200

Volts

with P and N suffixes)

10

Amps

with D suffix or without suffix)

5

Amps

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

30

Amps

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

(t = 10

μs, pulse) per leg, T

100

Amps

30

W

MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL

PACKAGE For Common Cathode/Anode Configurations)

1.50

°C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*

Top, Tstg

-55 to

+200

°C

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended

operational use of the packaged device above 175C may reduce its future performance. All qualification testing and

screening per MIL-PRF-19500 will only be performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.65

2.55

1.80

3.00

Volts

0.05

0.10

0.20

1.00

mA

28

N/A

nC

450

pF

SHDC625052

SHDC625052P

SHDC625052N

SHDC625052D