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T405Q-600 Datasheet(PDF) 4 Page - STMicroelectronics |
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T405Q-600 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 7 page T405Q-600 4/7 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 I(A) T(RMS) α=180° P(W) 180° α α Fig. 1: Maximum power dissipation versus RMS on-state current. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 Tc(°C) α=180° I(A) T(RMS) Fig. 2: RMS on-state current versus case tem- perature. 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t (s) P Z th(j-c) Z th(j-c) K=[Zth/Rth] Fig. 3: Relative variation of thermal impedance versus pulse duration. 1 10 100 01 234 5678 9 10 V(V) TM T j=25°C T j=125°C T j max. : V to = 0.85 V R d = 100 mΩ I(A) TM Fig. 4: On-state characteristics (maximum val- ues). 1 10 100 1000 0.01 0.10 1.00 10.00 tp(ms) T j initial=25°C dI/dt limitation: 50A/µs I TSM I²t I (A), I²t(A²s) TSM Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I 2t. 0 5 10 15 20 25 30 35 40 1 10 100 1000 Number of cycles Non repetitive T j initial=25°C Repetitive T C=110°C t=20ms One cycle I(A) TSM Fig. 5: Surge peak on-state current versus number of cycles. |
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