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2SA1315 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SA1315 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1315 2009-12-21 4 Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VBE (sat) – IC −2.0 0 0 −0.4 −0.8 −1.2 −1.6 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.6 Common emitter VCE = −2 V 25 Ta = 100°C −55 −0.1 −0.01 −0.03 −0.1 −0.3 −1 −0.3 −0.5 −1 −3 Ta = −55°C 25 Common emitter IC/IB = 20 100 Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta 0 0 200 400 600 800 1000 1200 40 80 120 160 200 240 280 −5 −0.003 −0.3 −0.005 −0.01 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 −1 −3 −10 −30 −100 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* 100 ms* DC operation Ta = 25°C 1 s* |
Similar Part No. - 2SA1315_09 |
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Similar Description - 2SA1315_09 |
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