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2SA1356 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SA1356 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1356 2006-11-09 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1356 Audio Power Amplifier Applications • Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SC3419 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −80 mA Ta = 25°C 1.2 Collector power dissipation Tc = 25°C PC 5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) |
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