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2SA1356 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SA1356
Description  Audio Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1356 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SA1356
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1356
Audio Power Amplifier Applications
• Low saturation voltage: VCE (sat) = −0.32 V (typ.)
(IC = −500 mA, IB = −50 mA)
• High collector power dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SC3419
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−40
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−800
mA
Base current
IB
−80
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)


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