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2SA1432 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA1432
Description  High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1432 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA1432
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCE = −300 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −8 V, IC = 0
−0.1
μA
Collector-base breakdown voltage
V (BR) CBO
IC = −0.1 mA, IE = 0
−300
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = −1 mA, IB = 0
−300
V
hFE (1)
(Note 2)
VCE = −10 V, IC = −20 mA
30
150
DC current gain
hFE (2)
VCE = −10 V, IC = −1 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = −20 mA, IB = −2 mA
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −20 mA, IB = −2 mA
−1.2
V
Transition frequency
fT
VCE = −10 V, IC = −20 mA
40
60
MHz
Collector output capacitance
Cob
VCB = −20 V, IE = 0, f = 1 MHz
6
8
pF
Note 2: hFE (1) classification R: 30 to 90, O: 50 to 150
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
A1432
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)


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