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2SC3668 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3668 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC3668 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.0 µ (typ.) • Complementary to 2SA1428. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) |
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