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2SC3803 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3803 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC3803 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: Cob = 3.5 pF (typ.) • Complementary to 2SA1483 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Continuous collector current IC 200 mA Continuous base current IB 50 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
Similar Part No. - 2SC3803_04 |
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Similar Description - 2SC3803_04 |
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