1N4448HWS

Document number: DS30196 Rev. 10 - 2

2 of 4

www.diodes.com

November 2010

© Diodes Incorporated

1N4448HWS

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

80

V

RMS Reverse Voltage

57

V

Forward Continuous Current

500

mA

Average Rectified Output Current

250

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0s

4.0

1.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

200

mW

Thermal Resistance Junction to Ambient Air (Note 4)

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

80

⎯

V

Forward Voltage

0.62

⎯

⎯

⎯

0.72

0.855

1.0

1.25

V

Peak Reverse Current (Note 5)

⎯

100

50

30

25

nA

μA

μA

nA

Total Capacitance

⎯

3.5

pF

Reverse Recovery Time

⎯

4.0

ns

Notes:

4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

0

100

300

025

50

75

125

150

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve

A

°

200

175

Note 4

10

100

1

0.1

01,000

800

200

400

600

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

Fig. 2 Typical Forward Characteristics

F

T = 25 C

A

°